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EM6K1
Transistor
Small switching (30V, 0.1A)
EM6K1
!Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. !External dimensions (Units : mm)
EMT6
0.22
(4) (5) (6) (3) (2)
1.2 1.6
(1)
0.13
Each lead has same dimensions
Abbreviated symbol : K1
!Applications Interfacing, switching (30V, 100mA) !Equivalent circuit !Structure Silicon N-channel MOSFET
(6) (5) Gate Protection Diode (4)
Tr1
!Packaging specifications
Package Code Type EM6K1 Basic ordering unit (pieces) Taping T2R 8000
(1) Gate Protection Diode Tr2 (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain
(2)
0.5
(3)
A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
!Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IDR IDRP PD
1 2
Limits 30 20 100 400 100 400 150 150 -55~+150
Unit V V mA mA mA mA mW/TOTAL 120mW/1ELEMENT C C
Reverse drain current
Total power dissipation (Tc=25C) Channel temperature Storage temperature
1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands.
Tch Tstg
0.5 0.5 1.0 1.6
EM6K1
Transistor
!Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tr Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V mS pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V VGS=0V f=1MHz ID=10mA, VDD 5V VGS=5V RL=500 RGS=10
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte resistance Forward transfer admittance
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
!Electrical characteristic curves
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15 4V 3V
DRAIN CURRENT : ID (A)
200m
VDS=3V 100m Pulsed
2
VDS=3V ID=0.1mA
DRAIN CURRENT : ID (A)
3.5V
50m 20m 10m 5m 2m 1m
0.5m
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
Ta=125C 75C 25C -25C
0.5
0.2m
0 0
1
2
3
4
5
0.1m 0
1
2
3
4
0 -50 -25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (C)
Fig.1 Typical Output Characteristics
Fig.2 Typical Transfer Characteristics
Fig.3 Gate Threshold Voltage vs. Channel Temperature
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125C 75C 25C -25C
20 10 5
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VGS=4V Pulsed
50
VGS=2.5V Pulsed
15
Ta=25C Pulsed
10
2 1 0.5 0.001 0.002
2 1 0.5 0.001 0.002
5
ID=0.1A ID=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
EM6K1
Transistor
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
REVERCE DRAIN CURRENT : IDR (A)
9
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75
ID=100mA
VGS=4V Pulsed
FORWARD TRANSFER ADMITTANCE : Yfs (S)
0.5
VDS=3V Pulsed
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
VGS=0V Pulsed
0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=-25C 25C 75C 125C
ID=50mA
Ta=125C 75C 25C -25C
100 125
150
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature
Fig.8 Forward Transfer Admittance vs. Drain Current
Fig.9 Reverse Drain Current vs. Source-Drain Voltage ()
REVERCE DRAIN CURRENT : IDR (A)
200m 100m 50m
Ta=25C Pulsed
50
20
CAPACITANCE : C (pF)
Ta=25C f=1MHZ VGS=0V Pulsed Ciss
SWITHING TIME : t (ns)
1000 tf 500 td(off)
Ta=25C VDD=5V VGS=5V RG=10
200 100 50
tr
20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V
0V
10 5
Coss Crss
20 10 5
2 1 0.5 0.1
td(on)
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2 0.1 0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Reverse Drain Current vs. Source-Drain Voltage ()
Fig.11 Typical Capacitance vs. Drain-Source Voltage
Fig.12 Switching Characteristics
!Switching characteristics measurement circuits
Pulse Width 90% VGS 50% 10% 10% 50%
VGS
ID D.U.T. RL
VDS
VDS
10% 90% td(off) tf toff
RG
VDD
90% td(on) ton tr
Fig.13 Switching Time Test Circuit
Fig.14 Switching Time Waveforms
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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